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Samsung delivers Phase-Change Memory, successor to NOR Flash

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Following last week’s Phase-Change Memory announcement by Intel-backed Numonyx, the Korean giant did not want to remain silent for long. With the sun rising in the Far East, we received a press release from Samsung, claiming a breakthrough in Phase-Change memory. The Korean giant started shipping 512 Megabit Multi-Chip PRAM chips.

Samsung touts PRAM as the successor of NOR Flash, as stated by Dong-soo Jun [Executive VP, Memory Sales and Marketing]: “The launch of our PRAM in an advanced MCP solution for the replacement of 40nm-class and finer geometry NOR meets this need head-on. Our PRAM MCP will not only enable handset designers to utilize conventional platforms, but expedite the introduction of LPDDR2 DRAM and next-generation PRAM technology as the leading-edge basis for high-performance solutions.”

The chips are being manufactured using a tri-metal alloy consisted out of AntimonyGermaniumTitanium. Back in September 2009, Samsung began manufacturing of PRAM test chips using 60nm process node, but the company always had 40/45nm geometry in mind for mass production. With the mature 40nm node, Samsung Electronics initiated wafer production of Phase Change PRAM dies, and given the time necessary to finalize a wafer, we should see the first chips later in the quarter.

We wonder who is going to be the first company to use PRAM in their handhelds. We would not be surprised if it turns out to be Samsung themselves. In any case, Phase-Change memory is becoming a reality and hopefully, there will be no turning back. The advantages that this type of memory brings are numerous, with the most important one perhaps being the increase in longevity of memory cells.

Original Author: Theo Valich


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